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Усилители мощности стерео — JAVA Hi-Fi DOUBLE SHOT GAN FET

Описание, изображения, технические характеристики и спецификации

JAVA Hi-Fi DOUBLE SHOT GAN FET
Источник изображения — © JAVA Hi-Fi

The Double Shot GaN FET is a stereo power amplifier from JAVA Hi-Fi, built around gallium nitride output transistors for high power in a compact chassis. JAVA Hi-Fi has built its catalogue specifically around GaN FET technology, a relatively recent development in power amplification known for delivering high output with considerably less heat and bulk than conventional bipolar or MOSFET output devices.

Position in line

It sits above the Single Shot GaN FET in JAVA Hi-Fi's amplifier range, roughly double that model's output figures based on the naming convention. As the higher-output model in a clearly named two-tier range, this amplifier likely shares the same fundamental GaN FET output stage technology as its Single Shot sibling, scaled up through a doubled or paralleled output device configuration.

Key specs that matter

Rated output is 400 W into 8 ohms, doubling to 800 W into 4 ohms. At 440 x 415 x 130 mm and 9.2 kg it is remarkably light for its rated output, consistent with the efficiency of GaN FET output devices, which typically run considerably cooler than a conventional design of similar power, allowing a lighter heatsink and overall chassis.

Sound and use context

Expect a highly powerful presentation from a compact, light chassis, with the clean doubling into 4 ohms suggesting a robust power supply despite the low weight - GaN FET technology's efficiency advantage means this amplifier's modest weight should not be mistaken for a lack of genuine output capability.

Pairing

The 400/800 W output suits demanding or low-sensitivity loudspeakers without needing a large, heavy amplifier, a genuine practical advantage for a system where rack space or weight is a constraint.

Alternatives

The Single Shot GaN FET sits alongside this model in JAVA Hi-Fi's range at a lower power level, worth considering if this model's substantial 400/800 W output exceeds what the loudspeakers actually require. Gallium nitride amplifier technology remains a comparatively recent development within consumer hi-fi, and its track record, while promising, is naturally shorter than that of established bipolar or MOSFET designs. JAVA Hi-Fi own smaller amplifiers, such as the Carbon Single Shot, offer a useful reference point for comparing the brand's GaN FET voicing across different power tiers.

Характеристики

  • Название модели

    DOUBLE SHOT GAN FET

  • Чувствительность входа (mV)

    N/A

  • Входное сопротивление (балансное) (Ω)

    N/A

  • Входное сопротивление (небалансное) (Ω)

    N/A

  • Выходное сопротивление (балансное) (Ω)

    N/A

  • Выходное сопротивление (небалансное) (Ω)

    N/A

  • Максимальный ток (A)

    N/A

  • Выходная мощность (8Ω) (W)

    400

  • Выходная мощность (4Ω) (W)

    800

  • Усиление (dBu)

    N/A

  • Нижняя граница частотного диапазона +/- 3дБ (Hz)

    N/A

  • Верхняя граница частотного диапазона +/- 3дБ (Hz)

    N/A

  • Отношение сигнал/шум (dB)

    N/A

  • Коэффициент гармонических искажений + шум (0% обратной связи) (%)

    N/A

  • Коэффициент гармонических искажений + шум (100% обратной связи) (%)

    N/A

  • Максимальное энергопотребление (W)

    N/A

  • Коэффициент демпфирования

    N/A

  • Габариты (mm)

    440 x 415 x 130

  • Вес (kg)

    9.2

  • Официальная ссылка

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