Power amplifiers stereo — JAVA Hi-Fi SINGLE SHOT GAN FET

The SINGLE SHOT GAN FET is a stereo power amplifier from JAVA Hi-Fi, built around advanced Gallium Nitride (GaN) Field-Effect Transistor output devices rather than conventional bipolar or MOSFET technology. The SINGLE SHOT GAN FET brings this cutting-edge semiconductor technology to two-channel power amplification.

Key specs that matter

Output power is 200W into 8 ohms, doubling cleanly to 400W into 4 ohms - a textbook power doubling indicating a robust, well-regulated power supply. At 440 x 415 x 130mm and 8.2kg, the SINGLE SHOT GAN FET's remarkably light weight relative to its substantial output reflects the genuine efficiency advantage GaN FET technology offers over conventional silicon-based output devices.

Sound and use context

Expect substantial power delivery from a lightweight chassis - GaN FET technology's inherent efficiency advantage lets JAVA Hi-Fi deliver considerable output without the heavy heatsinking and transformer mass conventional amplifier technology typically requires.

Pairing

The clean power doubling into 4 ohms suits a wide range of loudspeaker sensitivities and impedances, and JAVA Hi-Fi's own DOUBLE SHOT or SINGLE SHOT LDR preamplifiers share matching chassis dimensions for a coherent stack.

Alternatives

JAVA Hi-Fi's broader amplifier catalogue offers alternatives for buyers wanting a different output level within the same advanced GaN FET engineering philosophy.